Book description
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses.
After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices.
Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices.
- Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses
- Examines improvements to flash technology, charge trapping, and resistive random access memory
- Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
Table of contents
- Cover image
- Title page
- Copyright
- Contributor contact details
- Woodhead Publishing Series in Electronic and Optical Materials
- 1. Overview of non-volatile memory technology: markets, technologies and trends
- Part I: Improvements in Flash technologies
-
Part II: Phase change memory (PCM) and resistive random access memory (RRAM) technologies
- 5. Phase change memory (PCM) materials and devices
-
6. Nanowire phase change memory (PCM) technologies: principles, fabrication and characterization techniques
- Abstract:
- 6.1 Introduction
- 6.2 Strategies for improving the PCM performance
- 6.3 The use of nanowires
- 6.4 Fabrication of phase change nanowires (PC-NWs): top-down approaches
- 6.5 Fabrication of phase change nanowires (PC-NWs): bottom-up approaches
- 6.6 Fabrication of phase change nanowires (PC-NWs): other techniques
- 6.7 Characterization of PC-NWs
- 6.8 Conclusion
- 6.9 Sources of further information and advice
- 6.10 References
- 7. Nanowire phase change memory (PCM) technologies: properties and performance
-
8. Modeling of resistive random access memory (RRAM) switching mechanisms and memory structures
- Abstract:
- 8.1 Introduction
- 8.2 Methodology for ab initio modeling of OxRRAMs
- 8.3 Physical concept for OxRRAM switching mechanisms based on density functional theory (DFT)-based ab initio modeling
- 8.4 OxRRAM optimization based on DFT-based ab initio modeling
- 8.5 Conclusion and future trends
- 8.6 References
- 9. Metal oxide resistive random access memory (RRAM) technology
-
10. Conductive bridge random access memory (CBRAM) technology
- Abstract:
- 10.1 Introduction
- 10.2 Scaling challenges in dynamic random access memory (DRAM)
- 10.3 Scaling challenges in Flash memory
- 10.4 Marketplace challenges for emerging memory technologies
- 10.5 Operation of a CBRAM cell from an atomic wire point of view
- 10.6 The ON state of a CBRAM cell and the programming operation
- 10.7 The OFF state of a CBRAM cell and the erase operation
- 10.8 Conclusion and future trends
- 10.9 References
- 11. Memristors for non-volatile memory and other applications
-
Part III: Alternative emerging technologies
- 12. Molecular, polymer and hybrid organic memory devices (OMDs)
- 13. Nano-electromechanical random access memory (RAM) devices
-
14. Ferroelectric random access memory (FRAM) devices
- Abstract:
- 14.1 Introduction
- 14.2 Basic properties of ferroelectric capacitors
- 14.3 Ferroelectric materials used for FRAM devices
- 14.4 FRAM fabrication processes
- 14.5 Ferroelectric memory cell structure of capacitor-type FRAM devices
- 14.6 Assessing the reliability of FRAM devices
- 14.7 Applications of FRAM devices
- 14.8 Conclusion and future trends
- 14.9 References
- 15. Spin-transfer-torque magnetoresistive random access memory (STT-MRAM) technology
- Index
Product information
- Title: Advances in Non-volatile Memory and Storage Technology
- Author(s):
- Release date: June 2014
- Publisher(s): Woodhead Publishing
- ISBN: 9780857098092
You might also like
book
Memories for the Intelligent Internet of Things
A detailed, practical review of state-of-the-art implementations of memory in IoT hardware As the Internet of …
book
Nonvolatile Memory Design
The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical …
book
Advances in Embedded and Fan-Out Wafer Level Packaging Technologies
Examines the advantages of Embedded and FO-WLP technologies, potential application spaces, package structures available in the …
book
Nanoscale Semiconductor Memories
Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at …