October 2002
Intermediate to advanced
432 pages
9h 20m
English
The discussion of the transistor mechanism of Unit B.1 is extended here to include base-current mechanisms, which exist in the real transistor, and the effect of base-width modulation as discussed in Unit B.2. Initially, the case of active-mode operation is discussed, and this is followed by the general-bias case, which includes the possibility of both pn junctions becoming forward biased.
In the device model for the bipolar junction transistor, the parameter βDC is
Equation B.6
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where IB is the composite of all contributions to the base current. (The use of “dc” is consistent ...