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Chemical Sensors: Simulation and Modeling Volume 5: Electrochemical Sensors by Ghenadii Korotcenkov

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CHAPTER 8

ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH NANOSTRUCTURED CHANNELS AND NANOPARTICLE-MODIFIED GATE SURFACES

THEORY, MODELING, AND ANALYSIS

V. K. Khanna

1.  INTRODUCTION

The basic concept of the ion-sensitive field-effect transistor (ISFET) was introduced more than four decades ago by P. Bergveld (2003), who modified the conventional metal-oxide-semiconductor field-effect transistor (MOSFET) by discarding the gate metal, and replacing it with an ion-selective membrane, an electrolyte, and a reference electrode. As a result of this modification, the device could detect and measure the concentration of particular ionic species with a proton ...

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