
Intra-/Inter-Chip Optical Communications 269
FIGURE 7.18
Phase shift produced by a MOS capacitor as a function of the driven voltage
(V
D
) and for several lengths at λ = 1550 nm (symbols represent experimental
results while lines correspond to simulated values). Figure obtained from [65].
tively, e the electron charge, t the effective charge layer thickness, and V
FB
the flat-band voltage. This change in the charge density with the presence of
free carriers produces changes in the refractive index, that will be higher as
higher driven voltage. And consequently, changes in the effective refractive
index of the material induce a phase shift through Equation ...