Compact Models for Integrated Circuit Design

5

Compact Models for Small Geometry MOSFETs

5.1    Introduction

In this chapter the compact models for small geometry MOSFET (metal-oxide-semiconductor field-effect transistors) devices are presented. The continuous scaling of MOSFET devices toward decananometer regime has resulted in higher device density and faster circuit speed along with higher power dissipation [1, 2, 3, 4]. Many new physical phenomena became significant with the device dimension rapidly approaching its physical limit. These include small geometry effects [5, 6, 7, 8], channel length modulation (CLM) [9], drain-induced barrier lowering (DIBL) [10], velocity saturation [11], mobility degradation due to high vertical electric field [12], impact ionization [13], band-to-band ...