September 2018
Intermediate to advanced
545 pages
14h 16m
English
Content preview from Compact Models for Integrated Circuit Design
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Compact Models for Small Geometry MOSFETs
In this chapter the compact models for small geometry MOSFET (metal-oxide-semiconductor field-effect transistors) devices are presented. The continuous scaling of MOSFET devices toward decananometer regime has resulted in higher device density and faster circuit speed along with higher power dissipation [1, 2, 3, 4]. Many new physical phenomena became significant with the device dimension rapidly approaching its physical limit. These include small geometry effects [5, 6, 7, 8], channel length modulation (CLM) [9], drain-induced barrier lowering (DIBL) [10], velocity saturation [11], mobility degradation due to high vertical electric field [12], impact ionization [13], band-to-band ...