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Compact Models for Integrated Circuit Design
book

Compact Models for Integrated Circuit Design

by Samar K. Saha
September 2018
Intermediate to advanced content levelIntermediate to advanced
545 pages
14h 16m
English
CRC Press
Content preview from Compact Models for Integrated Circuit Design

5

Compact Models for Small Geometry MOSFETs

5.1    Introduction

In this chapter the compact models for small geometry MOSFET (metal-oxide-semiconductor field-effect transistors) devices are presented. The continuous scaling of MOSFET devices toward decananometer regime has resulted in higher device density and faster circuit speed along with higher power dissipation [1, 2, 3, 4]. Many new physical phenomena became significant with the device dimension rapidly approaching its physical limit. These include small geometry effects [5, 6, 7, 8], channel length modulation (CLM) [9], drain-induced barrier lowering (DIBL) [10], velocity saturation [11], mobility degradation due to high vertical electric field [12], impact ionization [13], band-to-band ...

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Publisher Resources

ISBN: 9781482240672