This chapter presents the dynamic compact MOSFET (metal-oxide-semiconductor field-effect transistor) models for analyzing the device performance under time-varying terminal voltages in circuit operation. The MOSFET device models developed in Chapters 4 and 5 are applicable to devices under DC or steady-state biasing condition, that is, when the terminal voltages do not vary with time. However, the real circuit operates under time-varying terminal voltages. Under such biasing condition, the device behavior is described by dynamic models. If the rate of change of terminal voltages is sufficiently small, the device operation can be described by a small signal dynamic model. On the other hand, ...
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