Compact MOSFET Models for RF Applications
For analog and radio frequency (RF) applications of metal-oxide-semiconductor field-effect transistors (MOSFETs), it is critical to understand the behavior of these devices under applied signal. In Chapter 6, the analytical expressions are derived for modeling the terminal charges and capacitances of a MOSFET device based on the quasistatic (QS) assumption. For analog/RF applications of MOSFETs, the effect of noise, non-quasistatic (NQS) effect, and resistive network of these devices must be properly characterized and modeled for circuit CAD (computer-aided design). This chapter presents the basic understanding of modeling device noise, high-frequency characteristics such as ...
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