Compact Models for Integrated Circuit Design

9

Compact Models for Ultrathin Body FETs

9.1    Introduction

This chapter presents compact models for the emerging ultrathin-body (UTB) field-effect-transistors (FETs). The UTB FETs include multiple-gate or multigate FinFETs and silicon-on-insulator (SOI) multigate UTB-FETs (UTBSOI FETs) [1,2]. FinFETs and UTB-SOI FETs have emerged as the real alternatives to MOSFETs (metal-oxide-semiconductor field-effect transistors) and planar CMOS (complementary metal-oxide-semiconductor) technology to surmount the continuous scaling challenges of MOSFET devices. The continuous miniaturization of the conventional planar MOSFET devices has become more challenging at the same rate of Moore’s law [3, 4, 5, 6] due to several fundamental device-physics constraints ...