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Compact Models for Integrated Circuit Design
book

Compact Models for Integrated Circuit Design

by Samar K. Saha
September 2018
Intermediate to advanced content levelIntermediate to advanced
545 pages
14h 16m
English
CRC Press
Content preview from Compact Models for Integrated Circuit Design

11

Bipolar Junction Transistor Compact Models

11.1  Introduction

As described in Chapters 4 and 5, the pn-junctions are integral part of a MOSFET (metal-oxide-semiconductor field-effect transistor) device structure as the source and drain regions. Under the appropriate biasing condition of a MOSFET device, the source of the source-substrate pn-junction provides a steady supply of mobile carriers to form a conducting channel from the source to drain and the drain of the drain-substrate pn-junction collects the mobile carriers generating drain current. Two back-to-back pn-junctions form a bipolar junction transistor (BJT). BJTs are very often used in VLSI (very-large-scale-integrated) circuits. Therefore, a basic understanding of BJT modeling ...

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Publisher Resources

ISBN: 9781482240672