In this appendix we shall discuss the two point collocation method (*N* = 2) given in Wang *et al*. [1]. The charge sheet model equation for the channel current of a MOS transistor and continuity equation give:

where = /, and the coordinate *y* is normalized to the channel length *L*. The mobility is assumed to be constant along the channel with the value *μ _{eff}*. The non-quasistatic model considering the velocity saturation effect is discussed in Wang

which can be written as:

where:

and: ...

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