Dynamic RAM

Index

A

Access time, 14, 20, 38

4.5 Mbit CMOS SRAM, 309

with buried word line, 226

in CMOS vs. NMOS design, 83

and error checking, 331

with inter-vs. intra-subarray replacement, 336

and junction capacitance, 209

with low V_th gated preamplifier (LGA), 329

with offset compensated presensing, 327

and parity method, 331

RAS, 134, 243, 311

with twisted driveline SA and MPD, 70

Access transistors, 1; see also Transistors

Address buffers, 308, 309

Address comparators (ACs), 334, 335

Addressing; see also Decoders

multiplexed, 6, 82, 302, 308

nonmultiplexed, 6, 11

Address transition detection (ATD) circuits, 14

AHO, see Al₂O₃/HfO2 (AHO) dielectric

Akasura, M., 261

Al₂O₃ film, 156, 167, 178, 181, 225, 232

Al₂O₃/HfO₂ (AHO) dielectric, 222, 224

Al Cu RIE ...