Electronic Circuit Analysis

Chapter 4

Characteristics of Transistor Devices (BJT, FET and MOSFET)

Learning Objectives

To get familiarity of structural details and fundamental concepts of

• NPN and PNP Transistors, its characteristics and h-parameters.
• The h-parameter analysis of Transistor amplifiers.
• Field Effect Transistors, its characteristics and amplifier concepts.
• Different types of MOSFET devices and their characteristics.
• Unijunction Transistor (UJT) characteristics.

4.1 INTRODUCTION

• The invention of Transistor (semiconductor electronic device) at (AT & T) Bell Telephone Laboratories at New Jersey, USA, in 1948, revolutionised the manufacture of electronic devices resulting in various applications of Electronics and Communication Engineering, computers, Internet, ...