Chapter 4

Characteristics of Transistor Devices (BJT, FET and MOSFET)

Learning Objectives

To get familiarity of structural details and fundamental concepts of

  • NPN and PNP Transistors, its characteristics and h-parameters.
  • The h-parameter analysis of Transistor amplifiers.
  • Field Effect Transistors, its characteristics and amplifier concepts.
  • Different types of MOSFET devices and their characteristics.
  • Unijunction Transistor (UJT) characteristics.
4.1 INTRODUCTION
  • The invention of Transistor (semiconductor electronic device) at (AT & T) Bell Telephone Laboratories at New Jersey, USA, in 1948, revolutionised the manufacture of electronic devices resulting in various applications of Electronics and Communication Engineering, computers, Internet, ...

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