
262 Energy-Aware Memory Management for EMSs
V
DD
GND
Standby Bias
Active Bias
Standby Bias
Active Bias
Adaptive
Body Bias
Generator
Figure 8.2 Body Biasing technique applied to minimize leakage.
have shown that subthreshold leakage scales as V
3
dd
[6], which makes it very
attractive as a technique for both static and dynamic power reduction. Since
a reduction in supply voltage degrades performance, similarly to multi-V
th
designs, low V
dd
must be used on noncritical gates to preserve performance.
With respect to the multi-V
th
case, the use of multiple V
dd
s has an additional
constraint due to the fact that when two different voltage domains have to be
interfaced,