
272 Energy-Aware Memory Management for EMSs
transistors of the cells of the accessed sub-matrix. This increases the read
speed and improves the write-ability, which allows the cell to be designed with
a higher nominal threshold voltage to obtain the same speed and reliability. In
[18], FBB is applied on the PMOS transistors of the activated memory part.
This increases their strength and improves read stability without increasing
standby leakage.
The sub-threshold leakage of the NMOS pass-gate transistors can be re-
duced by using a negative word line voltage during standby. An interesting
implementation is discussed in [16]. This approach is very useful ...