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Foundations of Wireless and Electronics, 10th Edition
book

Foundations of Wireless and Electronics, 10th Edition

by M. G. Scroggie, S. W. Amos
October 2013
Intermediate to advanced content levelIntermediate to advanced
570 pages
27h 46m
English
Newnes
Content preview from Foundations of Wireless and Electronics, 10th Edition
217
ΙΟΒΌΛΕ
+ 0· It is therefore many times larger than
I
CBO
.
Note the
capital letter subscripts in h
FE
, signifying that it is the d.c. no-signal
ratio
I
C
/IBI
not
the signal ratio
i
c
/i
b
as in the last chapter. h
FE
and hf
e
are usually of the same order, at least; but both depend somewhat on
the working point and temperature.
/ CBO
(a) (b) (c)
Fig. 13.3 For the elucidation of leakage currents in transistors
A typical value of
I
CBO
for a low-power germanium transistor at
25° C is 3 μΑ.
I
CEO
could therefore be something like 200 μΑ, or
0.2 mA. As the leakage doubles for about every 9° C, at 70° C this
would have risen to almost 6 mA. In a case suc ...
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Publisher Resources

ISBN: 9781483105574