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Functionalization of Semiconductor Surfaces by Steven L. Bernasek, Franklin Tao

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CHAPTER 12

Chemical Stability of Organic Monolayers Formed in Solution

LESLIE E. O'LEARY, ERIK JOHANSSON, AND NATHAN S. LEWIS

12.1 REACTIVITY OF H-TERMINATED SILICON SURFACES

12.1.1 Background

The H–Si surface is important to the electronics and photovoltaics industries because Si–H is the starting point for many Si-based devices. In turn, the electronic and chemical properties of the H-terminated Si surface affect the properties of subsequent Si surfaces and interfaces [13]. Dangling or weak bonds present at the surface will affect minority-carrier (“excited-state”) processes, and will thus affect devices such as field-effect transistors and photovoltaics. Furthermore, the topography of, as well as the presence of adsorbed chemical contaminants on, a H-terminated Si surface greatly affects the electronic properties of Si/SiOx interfaces formed from this initial H-terminated Si surface [4,5]. Organic contaminants are difficult to remove from the Si surface, and different cleaning procedures have been shown to result in a variety of contaminant fingerprints. Hence, significant effort has been directed to understand the reactivity of the H–Si surface.

This section will explore the reactivity of the H-terminated Si surface with O2, H2O, alcohols, metals, amines, and thiols. The synthesis, as well as the physical and electronic characterization, of the H–Si surfaces will be reviewed briefly, but the reader is encouraged to consult Chapter 3 for a more detailed account of the preparation ...

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