GAAs High-Speed Devices: Physics, Technology, and Circuit Applications

INDEX

Aberration, 198

chromatic aberration, 198

spherical aberration, 198

Absorption coefficient, 221

Absorption edge, 17, 205

Acetone, 170

Activation energy, 24

Adduct, 84

Adjoint system, 516

Advanced air-to-air missile (AARAAM), 522

Aharonov-Bohm effect, 460, 461

Alkyl, 75, 83

AlGaAs, 1

Alpha, 3

Aluminum (AI), 57

Aluminum nitride, 147, 153

Amine, 173

trithanol amine, 173

gaseous amine, 173

Amplifier, 483

Anadigics, 3

Anderson's electron affinity rule, 16

Anderson localization, 227

Angle-resolved ultraviolet photoelectron spectroscopy (ARUPS), 64

Anisotropic, 21

Antimony (Sb), 57

Antireflection coating (ARC), 172

Arrhenius-type temperature dependence, 134

Arsenic-to-gallium ratio, 84

Arsine (AsH₃), 96, 97

Asynchronous transfer mode (ATM), 549

AT&T Microelectronics, 5

Atomic layer epitaxy (ALE), 56, 94

Atomic plane doping, 98

Atomic radii, 11

Auger electron spectrometer (AES), 58, 63, 65, 308

Autocorrelation function, 249

Automatic wafer register technique, 331

Avalanche photodiode (APD), 578, 582

separation, absorption, and multiplication (SAM-APD), 588

SAGM-APD, 588

Avantek, 3

Backgating effects, 352

Backscattering, 183, 188

Ballistic transport, 239

Ball-up effect, 313

Band curvature, 21

Band structure, 7

Bardeen limit, 282

Bardeen model, 281

Basis, 7

Bass cell, 83

Beam-blanking plates, 181

Beam-deflection system, 181

Beam-forming system, 181

β-elimination, 86

B-ISDN network, 599

Bleaching characteristic, 178

Bloch function, 206, 209

BNR (Bell Northern Research), 558

Boiling ...