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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
6 Gallium Nitride (GaN): Physics, Devices, and Technology
devices required novel technological concepts such as modied epitaxial buffer
structures, eld plates, and passivation layers. These technologies are described
in Section 1.2.
The operation conditions of power devices signicantly differ from those of
standard microwave operation principles, as shown in Figure 1.2. Analogue micro-
wave ampliers (e.g., operated in class AB) operate around a xed bias point; the
dynamic load line (e.g., the time-dependent position of the bias point in the output
I/V characteristics) makes use of the full I/V characteristic and can have a con-
siderable v ...
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Publisher Resources

ISBN: 9781482220049