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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
11GaN High-Voltage Power Devices
the test pad and the substrate provides the positive and negative branches of the verti-
cal leakage characteristics. Figure 1.5 shows a selection of vertical breakdown proles
taken from HEMT structures grown on buffer layers with different epitaxial designs.
The epitaxial layers were grown on n-type SiC wafers. Different buffer realizations
feature very unique vertical current ow properties, as represented by the respective
I/V characteristics. They differ in terms of symmetry between the positive branch and
the negative branch and the absolute value of maximum allowable vertical voltage in
the respective bra ...
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Publisher Resources

ISBN: 9781482220049