
16 Gallium Nitride (GaN): Physics, Devices, and Technology
conditions of the transistors operating in system environment especially whether or not
the application allows for oating substrates. In the latter case, the asymmetry of the
vertical buffer leakage is of minor concern only [35].
As demonstrated recently, the vertical buffer leakage can also be decreased by
providing an isolation implantation into the conductive SiC substrate before epitax-
ial growth of the GaN/AlGaN structures [39]. It has been shown that pre-epitaxy
implantation is possible without compromising the quality of epitaxial layers grown
on top of these pretreated surfaces ...