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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
21GaN High-Voltage Power Devices
1.3.4 counterMeAsures towArd oPtiMized Power switching
1.3.4.1 Optimized Epitaxial Buffer Design
As discussed earlier, design and composition of the buffer structure signicantly inu-
ence dynamic properties. High values of breakdown strength, for example, 170 V/µm,
have already been obtained in the past [47]. However, due to the high R
on_dyn
these
devices were not useful for switching applications. Therefore, different epitaxial
Source
(a)
(b)
(c)
Drain
Time
Time
Time
Off-state: steady,
biased at 300 V
Partially on, immediately afte
r
switching from off-state
On-state, steady
I
D
V
DS
I
D
V
DS
I
D
V
DS
Gate
–4V
Source
Drain
Gate
+1V
Electri ...
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Publisher Resources

ISBN: 9781482220049