
26 Gallium Nitride (GaN): Physics, Devices, and Technology
(10–30 nm compared to a few nanometers only). This means that the intrinsic elds
in the vicinity of the gate are reduced, which could be benecial for reliability [36].
However, according to the author’s knowledge, statistical reliability data on such
devices are not available to date.
1.4.3 inversion tyPe of norMALLy off trAnsistors
This approach makes use of carrier inversion as the gate is biased in the positive
direction. The AlGaN barrier layer is completely removed in the gate region. The
gate is placed directly on top of the GaN channel layer and separated by a suitable
gate insulator ...