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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
26 Gallium Nitride (GaN): Physics, Devices, and Technology
(10–30 nm compared to a few nanometers only). This means that the intrinsic elds
in the vicinity of the gate are reduced, which could be benecial for reliability [36].
However, according to the author’s knowledge, statistical reliability data on such
devices are not available to date.
1.4.3 inversion tyPe of norMALLy off trAnsistors
This approach makes use of carrier inversion as the gate is biased in the positive
direction. The AlGaN barrier layer is completely removed in the gate region. The
gate is placed directly on top of the GaN channel layer and separated by a suitable
gate insulator ...
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Publisher Resources

ISBN: 9781482220049