
36 Gallium Nitride (GaN): Physics, Devices, and Technology
GaN-powered 1.5-kW inverter, they have demonstrated an efciency of 99.3% being
practically constant with the power level. This is a signicant improvement against con-
ventional Insulated Gate Bipolar Transistor (IGBT), which have more losses especially at
low power levels (about 60% more at 500-W operation compared to GaN HEMTs) [1,2].
Figure 1.26 benchmarks the recent results on GaN power devices against Si and
SiC devices by means of the product of on-state resistance, R
on
, and gate charge,
Q
g
. As already described in Section 1.1, R
on
× Q
g
can be interpreted as a measure of
potentia ...