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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
41GaN High-Voltage Power Devices
38. I.B. Rowena, S.L. Selvaraj, T. Egawa, “Buffer thickness contribution to suppress ver-
tical leakage current with high breakdown eld (2.3 MV/cm) for GaN on Si,” IEEE
Electr Device L, vol. 32, no. 11, 2011, pp. 1534–1536.
39. P. Kotara, R. Zhytnytska, O. Hilt, E. Cho, F. Brunner, A. Thies et al., “Vertical block-
ing voltage improvement of GaN HEMT structures on n-SiC by pre-epitaxial substrate
implantation,” ECS J Solid State Sci Technol, vol. 2, no. 8, 2013, pp. N3064–N3067.
40. O. Hilt, P. Kotara, F. Brunner, A. Knauer, R. Zhytnytska, J. Wür, “Improved verti-
cal isolation for normally-off high voltage GaN-HFETs on n-SiC substrates,” IEEE T
Electron Dev, vol. 60, no. 10, 2013, pp. 3084–3090.
41. J. ...
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Publisher Resources

ISBN: 9781482220049