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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
45
AlGaN/GaN
High-Electron-Mobility
Transistors Grown
by Ammonia Source
Molecular Beam Epitaxy
Yvon Cordier
2.1 INTRODUCTION
Since it has been shown that an AlGaN/GaN heterostructure can generate a two-
dimensional electron gas (2DEG) [1], GaN-based high-electron-mobility transistors
(HEMTs) have been developed and are now established as the most interesting III-
nitride electron devices for high-frequency power amplication as well as power
switching. The reason for this is a combination of many factors [2]: the possibility
of achieving high sheet carrier concentration in the 2DEG (~1 × 10
13
/cm
2
) with a
high saturated velocity (>1.5 × 10
7
cm/s), ...
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Publisher Resources

ISBN: 9781482220049