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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
50 Gallium Nitride (GaN): Physics, Devices, and Technology
2.6 EVALUATION OF TRANSISTORS
To evaluate the potentialities of these structures, test devices including transmission
line model (TLM) and isolation patterns, diodes, and transistors have been fabricated
by photolithography. The device process starts with mesa denition by reactive ion
etching (RIE) step in a Cl
2
/Ar/CH
4
mixture. After a short RIE etching, TiAlNiAu
stacks are deposited by e-beam evaporation. The ohmic contacts are achieved after
rapid thermal annealing at 750°C for 30 seconds. NiAu lms are then evaporated for
gate Schottky contact as well as for access pads. These devices ...
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Publisher Resources

ISBN: 9781482220049