Skip to Main Content
Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
55AlGaN/GaN High-Electron-Mobility Transistors
resistivity can be the replacement of GaN in the buffer with a larger bandgap mate-
rial such as AlGaN. However, the growth of such a layer on silicon is more difcult
due to the smaller lattice parameter of AlGaN and the resulting stress. Nevertheless,
we succeeded in growing up to 1.5-µm crack-free AlGaN with 5%–10% of Al and
with low crystal quality degradation [25,27]. This enables us to achieve more stable
drain leakage currents below 30 µA at V
ds
= 100V in the studied devices.
These devices are not passivated, so they are not able to sustain large drain and
gate biases. In spite of a drain lea ...
Become an O’Reilly member and get unlimited access to this title plus top books and audiobooks from O’Reilly and nearly 200 top publishers, thousands of courses curated by job role, 150+ live events each month,
and much more.
Start your free trial

You might also like

Computational Electromagnetism

Computational Electromagnetism

Alain Bossavit, Isaak D. Mayergoyz
Radio-Frequency Digital-to-Analog Converters

Radio-Frequency Digital-to-Analog Converters

Morteza S Alavi, Jaimin Mehta, Robert Bogdan Staszewski
Voltage-Sourced Converters in Power Systems

Voltage-Sourced Converters in Power Systems

Amirnaser Yazdani, Reza Iravani

Publisher Resources

ISBN: 9781482220049