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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
73Gallium Nitride Transistors on Large-Diameter Si(111) Substrate
Nanyang Technological University using AlGaN/GaN HEMT structure with AlN
spacer layer [14,48]. Figure3.8 shows the cross-sectional high-resolution transmis-
sion electron microscopic (HR-TEM) image of AlGaN/GaN HEMT structure on
200-mm- diameter Si(111) with AlN spacer layer. Table 3.2 shows the list of reported
AlGaN/GaN HEMTs with 2DEG properties on 200-mm-diameter Si(111) substrate.
TABLE 3.2
AlGaN/GaN HEMTs on 200-mm-Diameter Si(111) Substrate
Afliation Year
Growth
Method
Substrate
Thick-
ness
(µm)
Total
Buffer
Thick-
ness
(µm)
Bowing
(µm)
Sheet
Resist-
ance, R
sh
(Ω/sq)
2DEG
Mobility ...
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Publisher Resources

ISBN: 9781482220049