
73Gallium Nitride Transistors on Large-Diameter Si(111) Substrate
Nanyang Technological University using AlGaN/GaN HEMT structure with AlN
spacer layer [14,48]. Figure3.8 shows the cross-sectional high-resolution transmis-
sion electron microscopic (HR-TEM) image of AlGaN/GaN HEMT structure on
200-mm- diameter Si(111) with AlN spacer layer. Table 3.2 shows the list of reported
AlGaN/GaN HEMTs with 2DEG properties on 200-mm-diameter Si(111) substrate.
TABLE 3.2
AlGaN/GaN HEMTs on 200-mm-Diameter Si(111) Substrate
Afliation Year
Growth
Method
Substrate
Thick-
ness
(µm)
Total
Buffer
Thick-
ness
(µm)
Bowing
(µm)
Sheet
Resist-
ance, R
sh
(Ω/sq)
2DEG
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