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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
78 Gallium Nitride (GaN): Physics, Devices, and Technology
Christy et al. [14] reported 1100 V of BV
gd
for devices (W
g
/L
gd
/L
g
= 15/20/1.5 µm) for
4-µm-thick buffer GaN with specic ON-resistance of 2.3 mΩ-cm
2
.
This is the highest BV
gd
achieved so far in the conventional single heterostructure
AlGaN/GaN HEMTs on 200-mm-diameter Si substrate. These values are almost
closer to the values achieved using 7.0-µm-thick buffer GaN on 100-mm-diameter
Si substrate by Selvaraj et al. [9]. However, Chen et al. [11] have reported only the
two-terminal buffer breakdown voltage of 1380 V with a total buffer thickness of 4.6
µm for the double heterostructure ...
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Publisher Resources

ISBN: 9781482220049