
83Gallium Nitride Transistors on Large-Diameter Si(111) Substrate
with uniformities of >90% were observed on a ¼ of the 200-mm wafer. The uni-
formity of the device parameters is >90%, which is consistent with the uniformity
of the material properties such as µ
H
(average = 1600 cm
2
/V·s), n
s
(average = 1.11
× 10
13
cm
−2
), and R
sh-H
(average = 387 Ω/sq). From the measured Hall parameters,
it was shown that the grown AlGaN/AlN/GaN heterostructures have good unifor-
mity across the 200-mm-diameter Si(111) substrate. The nonuniformity of µ
H
, n
s
,
and R
sh-H
are <10% over a full 200-mm-Si substrate (see Figure 3.18). The average V
th
value of the devices ...