Skip to Main Content
Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
88 Gallium Nitride (GaN): Physics, Devices, and Technology
ohmic contact is due to the formation of a low-metal-work-function Ti
x
Si
y
alloy at
the metal–semiconductor interface as well as the intermixing of Ti
x
Si
y
with the
bottom Ta metal layer. The formation of the alloy was conrmed by powder X-ray
diffraction, HR-TEM, and energy-dispersive X-ray spectroscopy analysis [68]. The
developed low R
c
non-gold ohmic contact to the conventional undoped AlGaN/GaN
HEMT structure is shown to be promising for the mass production of low-cost GaN
HEMTs on Si substrates in well-established silicon CMOS fabrication lines.
After the ohmic contact formation on ...
Become an O’Reilly member and get unlimited access to this title plus top books and audiobooks from O’Reilly and nearly 200 top publishers, thousands of courses curated by job role, 150+ live events each month,
and much more.
Start your free trial

You might also like

Computational Electromagnetism

Computational Electromagnetism

Alain Bossavit, Isaak D. Mayergoyz
Radio-Frequency Digital-to-Analog Converters

Radio-Frequency Digital-to-Analog Converters

Morteza S Alavi, Jaimin Mehta, Robert Bogdan Staszewski
Voltage-Sourced Converters in Power Systems

Voltage-Sourced Converters in Power Systems

Amirnaser Yazdani, Reza Iravani

Publisher Resources

ISBN: 9781482220049