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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
93Gallium Nitride Transistors on Large-Diameter Si(111) Substrate
with 18-nm-thick AlGaN barrier exhibited a I
Dmax
of 830 mA/mm,ag
mmax
of 263 mS/
mm, and a V
th
of −3.75 V. Subsequently, the HEMTs with 5-nm-thick AlGaN bar-
rier exhibited a I
Dmax
of 470 mA/mm, a g
mmax
of 310 mS/mm, and a V
th
of −0.82 V.
The Ni/Al/Ta Schottky gate exhibited a barrier height of 0.88 eV and a reverse gate-
leakage current (−20 V) of 3.8 × 10
3 mA/mm.
Figure 3.32 shows the small-signal gain versus frequency for the CMOS-
compatible non-gold metal stack AlGaN/GaN HEMTs with (a) 18-nm-thick AlGaN
400
300
200
100
0
–6 –4 –2
V
GS
(V)
02
0
200
400
600
800
1000
g
m
(mS/mm)
I
D
(mA/mm)
I
D
(18 nm) ...
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Publisher Resources

ISBN: 9781482220049