103Gallium Nitride Transistors on Large-Diameter Si(111) Substrate
24. B. D. Jaeger, M. V. Hove, D. Wellekens, X. Kang, H. Liang, G. Mannaert, K. Geens
and S. Decoutere, “Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200-
mm Si substrates”, 24th International Symposium on Power Semiconductor Devices
(ISPSD), June 2012, p.49.
25. H. M. Manasevit, F. M. Erdmann, and W. I. Simpson, “The use of metalorganics in the
preparation of semiconductor materials”, Journal of the Electrochemical Society: Solid
State Science, vol. 118, no. 11, pp.1864–1868, 1971.
26. T. Takeuchi. H. Arnano, K. Hirarnatsu, N. Sawaki and I. Akasaki, “Growth of single
crystalline GaN lm on Si substrate using 3C-SiC as an intermediate layer”, Journal of
Crystal Growth ...