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4
GaN-HEMT Scaling
Technologies for
HighFrequency Radio
Frequency and Mixed
Signal Applications
Keisuke Shinohara
ABSTRACT
This chapter focuses on recent advancements in device scaling technology of GaN-
based high electron mobility transistors (HEMTs) for high-frequency RF and mixed
signal applications. First, unique material properties of GaN-on-SiC technology
CONTENTS
Abstract .................................................................................................................. 109
4.1 Introduction .................................................................................................. 110
4.2 Material Properties of Ga ...