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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
124 Gallium Nitride (GaN): Physics, Devices, and Technology
4.5.5 oPtiMuM t-shAPed gAte design for
M
iniMized PArAsitic cAPAcitAnce
The gate resistance (R
g
) is a key device parameter that affects f
max
and a noise per-
formance of HEMTs. A T-shaped gate structure has been used to reduce R
g
while
minimizing the gate length (L
g
). With aggressive device scaling, a parasitic capaci-
tance (C
p
) associated with T-shaped gate geometry becomes no longer negligible
and a careful design of T-gate structure is required. A C
p
was calculated using 3D
full-wave electromagnetic eld simulation. Figure 4.15 illustrates the simulated
T-gate structure that has a ...
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Publisher Resources

ISBN: 9781482220049