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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
129GaN-HEMT Scaling Technologies for High-Frequency
peak value of 400 GHz at a higher V
ds
of 6 V and a similar I
ds
of 0.24 A/mm. Figure
4.22b shows output characteristics and f
T
/f
max
contour plots for 20-nm D-mode HEMT
with an aggressive S-D scaling (L
gs
= L
gd
= 40 nm) (Figure 4.14c). Unlike the unscaled
device, the device showed a continuous increase of f
T
with V
ds
above the V
sat
(~0.5 V)
until reaching a maximum value of 310 GHz at V
ds
=5 V and I
ds
= 0.7 A/mm. A peak
f
max
of 377 GHz was obtained at a similar bias condition. The data demonstrate that
Gate-to-drain distance (nm)
100
L
g
= 20–80 nm
10
1
10
100
1000
Gen-I
Gen-II
Gen-III
Gen-IV
Off-state breakdown ...
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Publisher Resources

ISBN: 9781482220049