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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
134 Gallium Nitride (GaN): Physics, Devices, and Technology
Model parameters
MSG
–20dB.decade
Gen-IV
Asymmetric self-aligned-gate
3D n
+
- GaN - 2DEG contact
40
30
20
10
0
110 100
Frequency (Ghz)
RF
gains
(dB)
L
g
= 20 nm
g
m
(mS/mm) 1484
136
574
89
0.03
0.38
0.13
0.18
327
558
g
d
(mS/mm)
C
gs
(fF/mm)
C
gd
(fF/mm)
R
i
(Ω·mm)
R
g
(Ω·mm)
R
s
(Ω·mm)
R
d
(Ω·mm)
f
T.model
(GHz)
f
max.model
(GHz)
L
gs
= 30 nm
L
gd
= 80 nm
V
ds
= 4.0 V
V
gs
= 0.25 V
I
ds
= 0.53 A/mm
U
g
|h21|
2
f
T
= 329 GHz
f
max
= 554 GHz
FIGURE 4.27 Measured and modeled RF gains versus frequency (0.5–65 GHz) for 20-nm
asymmetric self-aligned-gate HEMT with L
gs
= 30 nm and L
gd
= 80 nm. (K. Shinohara et al.,
Scaling of GaN HEMTs and Schottky d
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Publisher Resources

ISBN: 9781482220049