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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
161Group III-Nitride Microwave Monolithically Integrated Circuits
The development of broadband amplier based on GaN HEMTs from 30 to
4000MHz (i.e., more than 2 decades) is described in literature [100]. Feedback
and distributed amplier concepts are used. A feedback concept provides
42 dB gain with ± 1.75 dB atness and 32 dBm of output power. C- to Ku-band
ultra-broadband GaN MMIC amplier with 20 W output power is given in the
work of Masuda etal.[101] for the bandwidth of 6–18 GHz with a power gain of
9.6 dB. Arelativebandwidth of more than 115% is reached. The circuit dimen-
sion is 4.8 × 4 mm
2
. A reactive circuit concept is used for the range 6–18 GHz, as
it is argued that the output power of a distributed amplier is lower in th ...
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Publisher Resources

ISBN: 9781482220049