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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
166 Gallium Nitride (GaN): Physics, Devices, and Technology
of the n
th
transistors in the TWA required for the TML in Figure 5.12 actually can
be expressed as
×
=
1
=
1
(Ohm mm)
0,
0,
î=1
,
Y
ZR
W
n
nP
n
Qi
(5.16)
The resulting impedances Z
0,n
of the TMLs are very high for the rst transistors
to be realized, as the last transistor n has to yield a minimum value of the nal load
impedance Z
n
,0. With typical values for the resistor R
P
, it is more efcient to choose
bigger transistors for the rst n. Various NDPAs have thus been realized in GaN as
the TWA principle in a non-uniform way [103,118].
A design with a non-uniform distribution is depicted in Figure ...
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Publisher Resources

ISBN: 9781482220049