
171Group III-Nitride Microwave Monolithically Integrated Circuits
to self-biasing, is the most critical factor regarding LNA survivability. A series resis-
tance in the gate DC-feed can reduce this gate current through a feedback mecha-
nism, and may be used to improve LNA ruggedness at the expense of additional NF.
Figure 5.17 shows the image of the low-noise results of the wideband dual-gate
dual-stage LNA for the frequency range of 1–3 GHz from Figure 5.11 [113]. A
gain level of more than 30 dB is achieved with a matching of better than −10 dB is
achieved between 0.5 GHz–3 GHz for both an on-wafer and packaged situations.
The important integrat ...