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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
176 Gallium Nitride (GaN): Physics, Devices, and Technology
Because of their direct impact on the insertion loss in the transmit state, the match-
ing parameters S
11
and S
33
are optimized to be better than
15 dB over the full
bandwidth.
As the S
31
compresses under LS-drive for various power levels, in this case up
to 10W, a P
−0.1 dB
better than 1 W is reached at all frequencies; further, a minimum
compression is required for the full bandwidth up to 18 GHz for a power level of
10W. Similar results have been obtained by Campbell and Dumka [147]. The maxi-
mum transmission power transmission in the off-state amounts to
PW
VV
Z
f
pi
()=
()
2
Max,of
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Publisher Resources

ISBN: 9781482220049