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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
181Group III-Nitride Microwave Monolithically Integrated Circuits
For even higher frequencies and then based on dual-gate devices, Figure 5.27
gives the image of a dual-stage dual-gate PA for W-band operation [168].
The typical cell size of the dual-gate power cell is again 4 × 45 μm in this case for
operation at 88–94 GHz. The dual-gate devices provide an even lower outputimped-
ance due to the transformation of the high-intrinsic impedance throughthe parasitics
[156]. As explained by van Heijningen et al. [168], the optimum load determined by
simulation is (−0.66 + j 0.57) around 90 GHz for a dual-gate device. The achiev-
able matching to t ...
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Publisher Resources

ISBN: 9781482220049