191Group III-Nitride Microwave Monolithically Integrated Circuits
35. S. Lin, A.E. Fathy, A 20 W GaN HEMT VHF/UHF Class-D Power Amplier, IEEE
12th Annual Wireless and Microwave Technology Conference (WAMICON), 2011,
Clearwater Beach, FL, pp. 1–4.
36. S. Maroldt, R. Quay, C. Haupt, and O. Ambacher, Broadband GaN-Based Switch-Mode
Core MMICs with 20 W Output Power Operating at UHF, Proceedings of Compound
Semiconductor Integrated Circuit Symposium (CSIC), 2011, Waikoloa, HI, pp. 1–4.
37. A. Wentzel, W. Heinrich, A GaN Voltage-mode Class-D MMIC with Improved
OverallEfciency for Future RRH Applications, Proceedings of European Microwave
Conference (EUMW), 2013, Nuremberg, pp. 549–552.
38. S. Maroldt, C. Haupt, R. Kiefer, W. Bronner, S