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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
208 Gallium Nitride (GaN): Physics, Devices, and Technology
an appropriate pH value, the oxidation reaction dominates the process and, hence,
the PEC reaction oxidizes the GaN-based semiconductor surface, forming the
Ga
2
O
3
oxide layer on the GaN surface or the mixed Ga
2
O
3
and Al
2
O
3
oxide layer on
the AlGaN surface. Because the oxide layer was formed through chemical reaction
with the GaN-based semiconductors, the interface between the PEC-grown oxide
layer and the GaN-based semiconductor was nearly free of contamination, result-
ing in a low interface-state density. Moreover, the unique PEC oxidation method is
different from the other conventional ...
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Publisher Resources

ISBN: 9781482220049