
213GaN-Based Metal/Insulator/Semiconductor-Type
low interface-state density of the β-Ga
2
O
3
lms and the mixed oxide lms directly
grown using the PEC oxidation method, thus derived reactive insulator layers were
expected to improve the hydrogen forward response of the resulting MIS-type hydro-
gen sensors.
6.3.2 Pt/i-zno/gAn Mis hydrogen sensors with intrinsic zno
f
iLM dePosited using vAPor cooLing condensAtion Method
ZnO-based materials are important oxide materials for toxic and combustible
gas sensing applications. Furthermore, the ZnO- and GaN-based semiconductors
possess the same wurtzite crystalline structure and the similar lattice constant. ...