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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
218 Gallium Nitride (GaN): Physics, Devices, and Technology
where I
0,H
2
,max
is the maximum saturation current for the MIS hydrogen sensors
exposed to the dilute hydrogen ambience at a xed temperature. By combining with
Equations 6.13 through 6.16, the Langmuir isothermal equation above the tempera-
ture of 350 K can be rewritten as follows [20,67]:
1
ln
(/)ln( /)
11
ln
(/)
0,H0,air
O
0,H,max0,air H0,H ,max 0,air
2
2
222
II
P
KI IP
II
e
+
β
(6.17)
or
∆φ
=
∆φ
×+
∆φ
β
11
1
B
O
B,maxH B,max
2
2
P
KP
e
The reaction order β is one for operating temperatures above 348 K [11,12]. For
Pt/β-Ga
2
O
3
(4 nm)/GaN MIS-type hydrogen sensors, the plots of
1l
n
0,H0,air
2
II
)
(
ver-
sus (P
H
2
)
-1/2
in ...
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Publisher Resources

ISBN: 9781482220049