
232 Gallium Nitride (GaN): Physics, Devices, and Technology
302 times[29], shows explicitly the domination of multijunction concentrator SCs
over other technologies. However, modeling results and material limitations indicate
that such structures are reaching their theoretical efciency limits. Consequently,
exploration of new material systems becomes indispensable to overcome the 50%
efciency barrier. The InGaN material system, which demonstrates the versatil-
ity, promises a successful high-efciency PV material. As a result, in the following
parts of this chapter, III-nitride semiconductors will be described in the frame of
the development ...