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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
232 Gallium Nitride (GaN): Physics, Devices, and Technology
302 times[29], shows explicitly the domination of multijunction concentrator SCs
over other technologies. However, modeling results and material limitations indicate
that such structures are reaching their theoretical efciency limits. Consequently,
exploration of new material systems becomes indispensable to overcome the 50%
efciency barrier. The InGaN material system, which demonstrates the versatil-
ity, promises a successful high-efciency PV material. As a result, in the following
parts of this chapter, III-nitride semiconductors will be described in the frame of
the development ...
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Publisher Resources

ISBN: 9781482220049