
242 Gallium Nitride (GaN): Physics, Devices, and Technology
In addition, Figure 7.4d(iii) and (iv) show strain-balanced 25 cycles of In
0.1
Ga
0.9
N
(3nm)/GaN (10 nm) MQWs with very low defect density and abrupt interfaces. In
Figure 7.4d(ii), remarkably at surface with rms of 0.45 nm obtained by AFM
measurements also conrms the perfect growth quality of the MQWs. Furthermore,
photoluminescence (PL) measurements that were conducted for the third-generation
SCs, revealed PL emission lines corresponding to bandgaps of 2.28 eV and 3.21 eV for
SC-C and SC-D designs, respectively. It is important to note that InGaN-based SCs
having In content more ...