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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
242 Gallium Nitride (GaN): Physics, Devices, and Technology
In addition, Figure 7.4d(iii) and (iv) show strain-balanced 25 cycles of In
0.1
Ga
0.9
N
(3nm)/GaN (10 nm) MQWs with very low defect density and abrupt interfaces. In
Figure 7.4d(ii), remarkably at surface with rms of 0.45 nm obtained by AFM
measurements also conrms the perfect growth quality of the MQWs. Furthermore,
photoluminescence (PL) measurements that were conducted for the third-generation
SCs, revealed PL emission lines corresponding to bandgaps of 2.28 eV and 3.21 eV for
SC-C and SC-D designs, respectively. It is important to note that InGaN-based SCs
having In content more ...
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Publisher Resources

ISBN: 9781482220049