247InGaN-Based Solar Cells
of InGaN/GaN epilayers, incorporation of GaN cap layers into GaN QBs, growth
of InGaN/GaN MQW layers on free-standing GaN substrates would lead to better
material quality hence, better SC performance.
Furthermore, to attain high efciency PV based on InGaN, multijunction SCs
should be fabricated by connecting several junctions of InGaN subcells with different
In contents. Besides, possible integration of silicon and InGaN/GaN SCs would com-
bine high efciency with low-cost production PV technology. The InGaN-on-Si tan-
dem SCs can also be used under concentration to enhance the device performances.
REFERENCES
1. I. Allison, N.L. Bindoff, R.A. Bindschadler, P.M. Cox, N. de Noblet, M.H. England, J.E.
Francis et al. ...