
253
8
III-Nitride
Semiconductors: New
Infrared Intersubband
Technologies
Mark Beeler and Eva Monroy
CONTENTS
8.1 Introduction ..................................................................................................254
8.2 Intersubband Absorption in III-Nitride Nanostructures ............................... 255
8.2.1 GaN/AlGaN Polar Quantum Wells .................................................. 255
8.2.1.1 Modeling ............................................................................255
8.2.1.2 Growth and Defect Analysis ..............................................256
8.2.1.3 Intersubband Optical Characterization .............................. ...